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| TP0101T/TS P-Channel Enchancement-Mode MOSFET Product Summary ID (A) G 1 TO-236 (SOT-23) Top View 3 S 2 D TP0101T (P0)* TP0101TS (PS)* *Marking Code for TO-236 VDS (V) -20 20 rDS(on) (W) 0.65 @ VGS = -4.5 V 0.85 @ VGS = -2.5 V TP0101T -0.6 -0.5 TP0101TS -1.0 -0.9 Features D D D D D High-Side Switching Low On-Resistance: 0.45 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation Benefits D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation Applications D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems, DC/DC Converters D Power Supply Converter Circuits D Load/Power Switching-Cell Phones, Pagers Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS TA= 25_C TA= 70_C PD TJ, Tstg TP0101T -20 "8 -0.6 -0.48 -3 -0.6 0.35 0.22 -55 to 150 TP0101TSc -20 "8 -1.0 -0.8 -3 -1.0 1.0 0.65 -55 to 150 Unit V A Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. c. Copper lead frame. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70229. A SPICE Model data sheet is available for this product (FaxBack document #70559). Symbol RthJA TP0101T 357 TP0101TSc 125 Unit _C/W Siliconix S-52430--Rev. C, 05-May-97 1 TP0101T/TS Specificationsa Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = -10 mA VDS = VGS, ID = -50 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V TJ = 55_C VDS v -5 V, VGS = -4.5 V VDS v -5 V, VGS = -2.5 V VGS = -4.5 V, ID = -0.6 A rDS(on) gfs VSD VGS = -2.5 V, ID = -0.5 A VDS = -5 V, ID = -0.6 A IS = -0.6 A, VGS = 0 V -2.5 A -0.5 0.45 0.69 1.3 -0.9 -1.2 0.65 0.85 W S V -20 -0.5 -26 -0.9 -1.5 "100 -1 -10 V nA mA Symbol Test Conditions Min Typ Max Unit On-State On State Drain Currentb ID( ) D(on) Drain Source On-Resistanceb Drain-Source On Resistance Forward Transconductance b Diode Forward Voltageb Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -6 V, VGS = 0, f = 1 MHz VDS = -6 V, VGS =-4.5 V 6V 45 ID ^ -0.6 A 2020 180 720 110 80 30 pF 3000 pC Switching Turn-On Turn On Time td(on) tr Turn-Off Time td(off) tf Notes a. TA = 25_C unless otherwise noted. b. Pulse test: PW v300 ms duty cycle v2%. VDD = -6 V, RL = 12 W ID ^ -0 6 A VGEN = -4 5 V -0.6 A, -4.5 RG = 6 W 7 25 19 9 12 35 ns 30 15 VPLJ01 2 Siliconix S-52430--Rev. C, 05-May-97 TP0101T/TS Typical Characteristics (25_C Unless Otherwise Noted) 6.0 5.0 I D - Drain Current (A) 4.0 3.0 2.0 1.0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.0 Transfer Characteristics TC = -55_C VGS = 5 V 3.5 V 3V 2.5 V 2V 0.5, 1 V 4.5 V 4V I D - Drain Current (A) 1.5 25_C 125_C 1.0 0.5 1.5 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 4 350 300 rDS(on) - On-Resistance ( W ) C - Capacitance (pF) 3 250 200 150 Capacitance 2 VGS = 2.5 V 1 VGS = 4.5 V Ciss 100 Coss 50 Crss 0 0 1 2 3 4 5 ID - Drain Current (A) 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 7 VGS - Gate-to-Source Voltage (V) 6 5 4 3 2 1 0 0 600 VDS = 6 V ID = 0.5 A Gate Charge 1.7 On-Resistance vs. Junction Temperature rDS(on) - On-Resistance ( W ) (Normalized) 1.5 VGS = 4.5 V ID = 0.5 A 1.3 1.1 0.9 1200 1800 2400 3000 0.7 -50 0 50 100 150 Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C) Siliconix S-52430--Rev. C, 05-May-97 3 TP0101T/TS Typical Characteristics (25_C Unless Otherwise Noted) 10 Source-Drain Diode Forward Voltage 3.0 2.5 On-Resistance vs. Gate-to-Source Voltage 1 TJ = 150_C rDS(on) - On-Resistance ( W ) I S - Source Current (A) 2.0 1.5 1.0 0.5 0 0.1 TJ = 25_C ID = 0.5 A 0.01 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0.34 Threshold Voltage 10 Single Pulse Power 0.24 VGS(th) Variance (V) ID = 50 mA Power (W) 0.14 8 6 0.04 4 TC = 25_C Single Pulse -0.06 2 -0.16 -50 0 0 50 TJ - Temperature (_C) 100 150 0.001 0.01 0.1 Time (sec) 1 10 100 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 30 4 Siliconix S-52430--Rev. C, 05-May-97 |
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